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A Survey on Stunning IGZO Technology

Vishakha O. Gupta Published in Semiconductor

IJAIS Proceedings on National Level Technical Conference X-PLORE 2013
Year of Publication: 2013
© 2012 by IJAIS Journal
Series XPLORE
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  1. Vishakha O Gupta. Article: A Survey on Stunning IGZO Technology. IJAIS Proceedings on National Level Technical Conference X-PLORE 2013 XPLORE:1-3, March 2013. BibTeX

    @article{key:article,
    	author = "Vishakha O. Gupta",
    	title = "Article: A Survey on Stunning IGZO Technology",
    	journal = "IJAIS Proceedings on National Level Technical Conference X-PLORE 2013",
    	year = 2013,
    	volume = "XPLORE",
    	pages = "1-3",
    	month = "March",
    	note = "Published by Foundation of Computer Science, New York, USA"
    }
    

Abstract

Higher resolution in a small screen, lower power consumption, more accurate touch panels these things in high-demand by the gadget industry this will be fulfill by IGZO technology made from alloy of Indium Gallium Zinc Oxide material will enable even higher resolutions, lower power consumption, and higher performance touch screens, as well as narrower bezel widths for LCD display panels used in mobile devices such as Smartphone's, it can also be adapted for use in organic EL displays which hold out high expectations for the future ,this paper will describing why IGZO seems to be the way to go for the next generation of iOS devices, and LCD panel Based on past research paper.

Reference

  1. Dr. Noboru Kimizuka and his colleagues at National Institute for Research in Inorganic Materials (Japan) were the first in the world to succeed in the synthesis of IGZO crystal in 1985, and they actively studied various homologous structures such as IGZO for more than 10 years.
  2. In 2004, Prof. Hideo Hosono and his team at Tokyo Institute of Technology.
  3. Sharp Corporation and Semiconductor Energy Laboratory Co. , Ltd. jointly developed a new oxide semiconductor (IGZO) technology with high crystalline, by Sharp Corporation. com.
  4. Japanese Science and Technology Agency.
  5. F. Zhou , H. P. Lin , L. Zhang , J. Li , X. W. Zhang , D. B. Yu , X. Y. Jiang , Z. L. Zhang "Top-Gate Amorphous IGZO Thin-Film Transistors With A Sio Buffer Layer Inserted Between Active Channel Layer And Gate Insulator".
  6. "Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics "by Tze-Ching Fung .
  7. Chiao-Shun Chuang, Tze-Ching Fung , Barry G. Mullins , Kenji Nomura ,Toshio Kamiya , Han-Ping David Shieh , Hideo Hosono and Jerzy Kanicki "P-13: Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays".
  8. Electrical And Photosensitive Characteristics' Of ?-IGZO TFTs Related To Oxygen Vacancy"By Jinke Yao Volume 58 April 2011.
  9. http://sharp-world. com/corporate/news/120601. html.
  10. Highly Reliable Depletion –Mode ? -IGZO TFT Gate Driver Circuits For High Frequency Display Application Under Light Illumination ",by Kim ,B,Volume 33,April 2012.
  11. http://www. iscos. org

Keywords

4K2K, TFT, Thin-film transistor, Ultra-High Definition (UHD