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A Physics–based Model for Electrical Parameters of Double gate Hetero-material Nano Scale Tunnel FET

Brinda Bhowmick, Srimanta Baishya Published in Electronics

International Journal of Applied Information Systems
Year of Publication 2012
© 2010 by IJAIS Journal
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  1. Brinda Bhowmick and Srimanta Baishya. Article: A Physicsbased Model for Electrical Parameters of Double gate Hetero-material Nano Scale Tunnel FET. International Journal of Applied Information Systems 1(3):25-32, February 2012. BibTeX

    	author = "Brinda Bhowmick and Srimanta Baishya",
    	title = "Article: A Physicsbased Model for Electrical Parameters of Double gate Hetero-material Nano Scale Tunnel FET",
    	journal = "International Journal of Applied Information Systems",
    	year = 2012,
    	volume = 1,
    	number = 3,
    	pages = "25-32",
    	month = "February",
    	note = "Published by Foundation of Computer Science, New York, USA"


This paper focuses a hetero gate material dielectric DG TFET with low band gap source material, which offers high ratio, sub 60mV/dec subthreshold swing along with significant improvement in on current. Here analytical model for 2D electric field is derived from Poisson’s equation and is used to determine the subthreshold swing, transconductance, output conductance, gate threshold voltage, and drain threshold voltage of the proposed device. The results of derived model are compared with that of simulated results to examine the validity of model of electrical parameters and also comparison of the analytical model results with simulated results shows excellent agreement.


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Band-to-band tunneling, hetero material, subthreshold swing, threshold voltage