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Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode

by Raad M. S. Al-haddad, Suha H. Ibraheem, Ziad M. Abood, Issam M. Ibrahim
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International Journal of Applied Information Systems
Foundation of Computer Science (FCS), NY, USA
Volume 6 - Number 3
Year of Publication: 2013
Authors: Raad M. S. Al-haddad, Suha H. Ibraheem, Ziad M. Abood, Issam M. Ibrahim
10.5120/ijais13-450992

Raad M. S. Al-haddad, Suha H. Ibraheem, Ziad M. Abood, Issam M. Ibrahim . Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode. International Journal of Applied Information Systems. 6, 3 ( October 2013), 6-10. DOI=10.5120/ijais13-450992

@article{ 10.5120/ijais13-450992,
author = { Raad M. S. Al-haddad, Suha H. Ibraheem, Ziad M. Abood, Issam M. Ibrahim },
title = { Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode },
journal = { International Journal of Applied Information Systems },
issue_date = { October 2013 },
volume = { 6 },
number = { 3 },
month = { October },
year = { 2013 },
issn = { 2249-0868 },
pages = { 6-10 },
numpages = {9},
url = { https://www.ijais.org/archives/volume6/number3/533-0992/ },
doi = { 10.5120/ijais13-450992 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2023-07-05T18:52:21.997271+05:30
%A Raad M. S. Al-haddad
%A Suha H. Ibraheem
%A Ziad M. Abood
%A Issam M. Ibrahim
%T Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode
%J International Journal of Applied Information Systems
%@ 2249-0868
%V 6
%N 3
%P 6-10
%D 2013
%I Foundation of Computer Science (FCS), NY, USA
Abstract

In order to interpret the effect of semiconductor thickness and annealing temperature on the electrical characteristics of Al/n-CdTe/Au Schottky barrier diodes (SBDs), the forward and reverse bias current density-voltage (J-V) characteristics of these SBDs have been investigated in dark. Both of the values forward and reverse currents have decrease with increasing annealing temperature as well as the increase of thickness. The ideality factor (?), saturation current density (Js) and the barrier height (?B) were calculated using J-V plots. Also series resistance (Rs), shunt resistance (Rsh) has been calculated by R-V plots. The measurements showed that these parameters are affected by annealing temperature and the change in the thickness.

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Index Terms

Computer Science
Information Sciences

Keywords

Au/n-CdTe I-V characteristics series resistances shunt resistances

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