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Logic Gate Design using Ambipolar Carbon Nanotube Field Effect Transistors

Y. Srinivasa Rao, M. Pradeep Published in Advanced Computing

IJAIS Proceedings on International Conference and workshop on Advanced Computing 2014
Year of Publication: 2014
© 2014 by IJAIS Journal
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  1. Srinivasa Y Rao and M Pradeep. Article: Logic Gate Design using Ambipolar Carbon Nanotube Field Effect Transistors. IJAIS Proceedings on International Conference and workshop on Advanced Computing 2014 ICWAC 2014(1):6-10, June 2014. BibTeX

    @article{key:article,
    	author = "Y. Srinivasa Rao and M. Pradeep",
    	title = "Article: Logic Gate Design using Ambipolar Carbon Nanotube Field Effect Transistors",
    	journal = "IJAIS Proceedings on International Conference and workshop on Advanced Computing 2014",
    	year = 2014,
    	volume = "ICWAC 2014",
    	number = 1,
    	pages = "6-10",
    	month = "June",
    	note = "Published by Foundation of Computer Science, New York, USA"
    }
    

Abstract

In this work, the performance of ambipolar carbon nanotube field effect transistor (CNTFET) is evaluated using Standford CNTFET model in a novel way. Carbon nanotube field effect transistor utilizing a semiconducting carbon nanotube (CNT) channel controlled by both polarity and regular gates. In this work, static logic gates and circuits based on ambipolar carbon nanotube field effect transistors (CNTFETs) using transmission – gate method have been designed. The power and delay performance of ambipolar carbon nanotube field effect transistor (CNTFET) has been investigated in basic logic gates and combinational logic circuits like half adder, full adder, half subtractor and full subtractor based on Standford Carbon nanotube field effect transistor (CNTFET) model.

Reference

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Keywords

CNT, CNTFET, Transmission gate, Ambipolarlogic, Combinational circuits.