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Advancement in OPEFT Model

Vrushali V. Kelkar, Shrinivas S. Joshi, Rajesh B. Lohani Published in Circuit And Systems

International Journal of Applied Information Systems
Year of Publication 2012
© 2010 by IJAIS Journal
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  1. Vrushali V Kelkar, Shrinivas S Joshi and Rajesh B Lohani. Article: Advancement in OPEFT Model. International Journal of Applied Information Systems 4(3):44-47, September 2012. BibTeX

    	author = "Vrushali V. Kelkar and Shrinivas S. Joshi and Rajesh B. Lohani",
    	title = "Article: Advancement in OPEFT Model",
    	journal = "International Journal of Applied Information Systems",
    	year = 2012,
    	volume = 4,
    	number = 3,
    	pages = "44-47",
    	month = "September",
    	note = "Published by Foundation of Computer Science, New York, USA"


High speed low cost monolithically integrated photo electronic circuits using metal semiconductor field effect transistors are highly using for variouswavelength optical communications. In recent years GaAs is more extensively used for the fabrication of ion implanted MESFET than any other material. This paper discusses the methods used to solve continuity equation and their comparison with respect to the voltage-current characteristics and the AC characteristics in dark and illuminated condition.


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Optoelectronic, photovoltage, OPFET, semi-transparent