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Advancement in OPEFT Model

by Vrushali V. Kelkar, Shrinivas S. Joshi, Rajesh B. Lohani
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International Journal of Applied Information Systems
Foundation of Computer Science (FCS), NY, USA
Volume 4 - Number 3
Year of Publication: 2012
Authors: Vrushali V. Kelkar, Shrinivas S. Joshi, Rajesh B. Lohani
10.5120/ijais12-450649

Vrushali V. Kelkar, Shrinivas S. Joshi, Rajesh B. Lohani . Advancement in OPEFT Model. International Journal of Applied Information Systems. 4, 3 ( September 2012), 44-47. DOI=10.5120/ijais12-450649

@article{ 10.5120/ijais12-450649,
author = { Vrushali V. Kelkar, Shrinivas S. Joshi, Rajesh B. Lohani },
title = { Advancement in OPEFT Model },
journal = { International Journal of Applied Information Systems },
issue_date = { September 2012 },
volume = { 4 },
number = { 3 },
month = { September },
year = { 2012 },
issn = { 2249-0868 },
pages = { 44-47 },
numpages = {9},
url = { https://www.ijais.org/archives/volume4/number3/286-0649/ },
doi = { 10.5120/ijais12-450649 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2023-07-05T10:47:15.549017+05:30
%A Vrushali V. Kelkar
%A Shrinivas S. Joshi
%A Rajesh B. Lohani
%T Advancement in OPEFT Model
%J International Journal of Applied Information Systems
%@ 2249-0868
%V 4
%N 3
%P 44-47
%D 2012
%I Foundation of Computer Science (FCS), NY, USA
Abstract

High speed low cost monolithically integrated photo electronic circuits using metal semiconductor field effect transistors are highly using for variouswavelength optical communications. In recent years GaAs is more extensively used for the fabrication of ion implanted MESFET than any other material. This paper discusses the methods used to solve continuity equation and their comparison with respect to the voltage-current characteristics and the AC characteristics in dark and illuminated condition.

References
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  2. P. Chakrabarti, N. L. Shreshtha, S. Srivastava and V. Khemka, "An improved model of ion-implanted GaAs OPFET ", IEEE Trans. on Electron Devices Vol. 39, No. 5, May 1992.
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  8. Vrushali V. Kelkar and Dr. R. B. Lohani, "OPFET characteristics considering the effect of modified active layer material", Proceedings of International Conference & Workshop on Emerging Trends in Technology 2011, Volume-II, February 24th & 25th 2012.
  9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1983, pp. 755.
  10. Jaya T, Kannan V. , "Analytical Model for I-V Characteristics of Buried Gate MESFET", International Journal of Advanced Science and Technology Vol. 17,April 2010.
  11. Nandita Saha Roy,B. B. Pal and R. U. Khan,"Analysis ofGaAs OPFET with Improved Optical Absorption under Back Illumination," IEEE Transactions Election Devices,Vol. 46, pp. 2350-2353,Dec 1999
Index Terms

Computer Science
Information Sciences

Keywords

Optoelectronic photovoltage OPFET semi-transparent

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